NCEP30T12G mosfet equivalent, n-channel power mosfet.
* VDS =30V,ID =120A RDS(ON)=1.95mΩ (typical) @ VGS=10V RDS(ON)=2.85mΩ (typical) @ VGS=4.5V
Schematic Diagram
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* Excellent gate charge x RDS(on) produ.
The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg..
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